Current Spreading Improvement in GaN-Based Light-Emitting Diode Grown on Nano-Rod GaN Template

被引：7
|
作者：
Kuo, Cheng-Huang [1 ]
Chang, Li-Chuan [1 ]
Chou, Hsiu-Mei [2 ]
机构：
[1] Natl Chiao Tung Univ, Inst Lighting & Energy Photon, Tainan 71150, Taiwan
[2] Natl Cent Univ, Dept Opt & Photon, Jhongli 32001, Taiwan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2012年 / 24卷 / 07期
关键词：
Current spreading; InGaN/GaN; light-emitting diode (LED); nano; SI-DOPED GAN;
D O I：
10.1109/LPT.2012.2185043
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we demonstrate GaN-based light-emitting diodes (LEDs) with high-quality heavily-Si-doped n-GaN prepared on a nano-rod GaN (NR-GaN) template. With 20-mA current injection, it was found that light output power (LOP) can be enhanced 29.0%, as compared to the conventional LED. Enhancement of the LOP can be attributed to the improvement of the current spreading and the increase of light extraction efficiency by using the heavily-Si-doped n-GaN prepared on the NR-GaN template.
引用
收藏
页码：608 / 610
页数：3
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