InGaAs quantum dots formed in tetrahedral-shaped recesses on GaAs (111)B grown by metalorganic chemical vapor deposition

被引：7
|
作者：
Sakuma, Y
Shima, M
Awano, Y
Sugiyama, Y
Futatsugi, T
Yokoyama, N
Uchida, K
Miura, N
Sekiguchi, T
机构：
[1] Fujitsu Ltd, Atsugi, Kanagawa 2430197, Japan
[2] Univ Tokyo, ISSP, Minato Ku, Tokyo 1068666, Japan
[3] Tohoku Univ, IMR, Sendai, Miyagi 9808577, Japan
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1999年 / 28卷 / 05期
关键词：
(111)B; GaAs; InGaAs; metalorganic chemical vapor deposition (MOCVD); quantum dot (QD); tetrahedral-shaped recess;
D O I：
10.1007/s11664-999-0097-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Novel semiconductor quantum dots (QDs), grown in tetrahedral-shaped recesses (TSRs) formed on a (111)B GaAs substrate, are described from both material science and device application points of view. After explaining the fabrication procedure for TSRs, growth of InGaAs QDs and their optical properties are explained. It is revealed that an InGaAs QD of indium-rich chemical composition is formed spontaneously at the bottom of each TSR. The mechanism of the QD formation is discussed in detail. It is proved from magneto-photoluminescence that the QDs actually have optical properties peculiar to zero-dimensional confinement. Several experimental results indicating excellent growth controllability of the QDs are presented. Finally, recent challenges to apply the QDs to electronic memory devices are reported. Two kinds of devices, where the position of individual QD is artificially controlled, are proposed for the first time and the preliminary experimental results are explained.
引用
收藏
页码：466 / 480
页数：15
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