Inelastic light scattering on few-electron quantum-dot atoms

被引:3
|
作者
Brocke, T
Bootsmann, MT
Wunsch, B
Tews, A
Pfannkuche, D
Heyn, C
Hansen, W
Heitmann, D
Schüller, C
机构
[1] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany
[2] Univ Hamburg, Zentrum Mikrostrukt, D-20355 Hamburg, Germany
来源
关键词
quantum dots; inelastic light scattering; electronic excitations;
D O I
10.1016/j.physe.2003.12.049
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We investigate InAs self-assembled quantum dots (SAQD) by resonant inelastic light scattering. By applying a gate voltage between a metallic front gate and a back electrode, we can charge the quantum dots with single electrons (1-6). With resonant inelastic light scattering, we can directly observe the elementary electronic excitations of the few-electron quantum-dot atoms, which are formed by the SAQD. We observe excitations which we identify as transitions of electrons from the s- to the p-shell (s-p transitions) and from the p- to the d-shell (p-d transitions) of the quasiatoms. We find that the s-p transition energy decreases when the p-shell is filled with 1-4 electrons. This can be explained as an effect of Coulomb interaction, which is confirmed by calculations of the few-electron system, using exact numerical diagonalization. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:478 / 481
页数:4
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