Non-volatile Al2O3 memory using an Al-rich structure as a charge-storing layer (vol 41, pg 721, 2005)

被引：0
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作者：
Nakata, S
Saito, K
Shimada, M
机构：
来源：
ELECTRONICS LETTERS | 2006年 / 42卷 / 08期
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D O I：
10.1049/el:20060797
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：497 / 497
页数：1
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