Corrugated Channel In0.8Ga0.2As Quantum Well Transistors for Low Power Logic Applications

被引:0
|
作者
Smith, Jeffrey A. [1 ]
Barth, Michael [2 ]
Ni, Kai [1 ]
Cantoro, Mirco [3 ]
Kim, Dong-Won [3 ]
Datta, Suman [1 ,2 ]
机构
[1] Univ Notre Dame, Notre Dame, IN 46556 USA
[2] Penn State Univ, University Pk, PA 16802 USA
[3] Samsung Elect Co LTD, Log Technol Dev, Suwon, South Korea
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页数:2
相关论文
共 50 条
  • [21] InAs/Al0.2Ga0.8Sb quantum well Hall effect sensors
    Behet, M
    Bekaert, J
    De Boeck, J
    Borghs, G
    SENSORS AND ACTUATORS A-PHYSICAL, 2000, 81 (1-3) : 13 - 17
  • [22] Advanced High-K Gate Dielectric for High-Performance Short-Channel In0.7Ga0.3As Quantum Well Field Effect Transistors on Silicon Substrate for Low Power Logic Applications
    Radosavljevic, M.
    Chu-Kung, B.
    Corcoran, S.
    Dewey, G.
    Hudait, M. K.
    Fastenau, J. M.
    Kavalieros, J.
    Liu, W. K.
    Lubyshev, D.
    Metz, M.
    Millard, K.
    Mukherjee, N.
    Rachmady, W.
    Shah, U.
    Chau, Robert
    2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, 2009, : 292 - +
  • [23] Transport and quantum electron mobility in the modulation Si δ-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy
    Babinski, A
    Siwiec-Matuszyk, J
    Baranowski, JM
    Li, G
    Jagadish, C
    APPLIED PHYSICS LETTERS, 2000, 77 (07) : 999 - 1001
  • [24] Picoseconds carrier spin relaxation in In0.8Ga0.2As/Al0.5Ga0.5As/AlAs0.56Sb0.44 coupled double quantum wells
    Ishikawa, Tomoki
    Gozu, Shin-ichiro
    Mozume, Teruo
    Asakawa, Masaki
    Ohki, Shunsuke
    Tackeuchi, Atsushi
    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016,
  • [25] Transport and quantum electron mobility in the modulation Si δ-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy
    Babinski, Adam
    Siwiec-Matuszyk, J.
    Baranowski, J.M.
    Li, G.
    Jagadish, C.
    2000, American Institute of Physics Inc. (77)
  • [26] InAs quantum dots capped by GaAs, In0.4Ga0.6As dots, and In0.2Ga0.8As well
    Fu, Y
    Wang, SM
    Ferdos, F
    Sadeghi, M
    Larsson, A
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2002, 2 (3-4) : 421 - 426
  • [27] In0.8Ga0.2As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties
    Salii, R. A.
    Kosarev, I. S.
    Mintairov, S. A.
    Nadtochiy, A. M.
    Shvarts, M. Z.
    Kalyuzhnyy, N. A.
    SEMICONDUCTORS, 2018, 52 (07) : 870 - 876
  • [28] In0.8Ga0.2As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties
    R. A. Salii
    I. S. Kosarev
    S. A. Mintairov
    A. M. Nadtochiy
    M. Z. Shvarts
    N. A. Kalyuzhnyy
    Semiconductors, 2018, 52 : 870 - 876
  • [29] Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si
    Peng, C. -Y.
    Yuan, F.
    Yu, C. -Y.
    Kuo, P. -S.
    Lee, M. H.
    Maikap, S.
    Hsu, C. -H.
    Liu, C. W.
    APPLIED PHYSICS LETTERS, 2007, 90 (01)
  • [30] Enhancing power density of strained In0.8Ga0.2As/AlAs resonant tunneling diode for terahertz radiation by optimizing emitter spacer layer thickness
    Shi, Xiangyang
    Wu, Yuanyuan
    Wang, Ding
    Su, Juan
    Liu, Jie
    Yang, Wenxian
    Xiao, Meng
    Tan, Wei
    Lu, Shulong
    Zhang, Jian
    SUPERLATTICES AND MICROSTRUCTURES, 2017, 112 : 435 - 441