Characteristics of InGaN Quantum Wells Light-Emitting Diodes with Thin AlGaInN Barrier Layers

被引：0
|
作者：
Liu, Guangyu [1 ]
Zhang, Jing [1 ]
Tan, Chee-Keong [1 ]
Tansu, Nelson [1 ]
机构：
[1] Lehigh Univ, Dept Elect & Comp Engn, Ctr Photon & Nanoelect, Bethlehem, PA 18015 USA
来源：
2012 IEEE PHOTONICS CONFERENCE (IPC) | 2012年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The characteristics of InGaN quantum wells light-emitting diodes with thin large bandgap AlGaInN barriers were analyzed with taking into account the carrier transport effect, which resulted in efficiency-droop suppression.
引用
收藏
页码：431 / 432
页数：2
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