Nanoelectromechanical devices with carbon nanotubes

被引：34

作者：

Lee, Sang Wook ^{[1
]}

Campbell, Eleanor E. B. ^{[1
,2
]}

机构：

[1] Konkuk Univ, Sch Phys, Div Quantum Phases & Devices, Seoul 143701, South Korea

[2] Univ Edinburgh, Sch Chem, EaStCHEM, Edinburgh EH9 3JJ, Midlothian, Scotland

来源：

CURRENT APPLIED PHYSICS | 2013年 / 13卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

Carbon nanotube; Nanoelectromechanical system; Nano fabrication; FABRICATION; MEMORY;

D O I：

10.1016/j.cap.2013.02.023

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thanks to their excellent mechanical properties as well as interesting electrical characteristics, carbon nanotubes are among the most widely used materials for the study of electromechanical properties. This review paper presents the physical properties and the potential applications of carbon nanotube based nanoelectromechanical devices. We present an overview of fabrication methods followed by a discussion of the physical properties of CNT-NEMS. Finally some potential applications are discussed. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：1844 / 1859

页数：16

共 50 条

[21] Nanoelectronic Devices Based on Carbon Nanotubes
Dmitriev, Victor
Gomes, Fernando
Nascimento, Clerisson
[J]. JOURNAL OF AEROSPACE TECHNOLOGY AND MANAGEMENT, 2015, 7 (01) : 53 - 62
[22] Nanoelectronic devices based on carbon nanotubes
Zhbanov A.I.
Sinitsyn N.I.
Torgashov G.V.
[J]. Radiophysics and Quantum Electronics, 2004, 47 (5-6) : 435 - 452
[23] Nanoscale electronic devices on carbon nanotubes
Collins, PG
Bando, H
Zettl, A
[J]. NANOTECHNOLOGY, 1998, 9 (03) : 153 - 157
[24] Integration of carbon nanotubes devices into microelectronics
Hoenlein, W
Kreupl, F
Duesberg, GS
Graham, AP
Liebau, M
Seidel, R
Unger, E
[J]. NANOTUBE-BASED DEVICES, 2003, 772 : 3 - 15
[25] NeoSilicon Based Nanoelectromechanical Information Devices
Oda, Shunri
[J]. 2012 28TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL), 2012, : 45 - 48
[26] Graphene nanoelectromechanical systems as valleytronic devices
Ortiz, Walter
Szpak, Nikodem
Stegmann, Thomas
[J]. PHYSICAL REVIEW B, 2022, 106 (03)
[27] Diodelike effect in nanoelectromechanical shuttle devices
Wang, Rui-Qiang
Wang, Baigeng
Xing, D. Y.
[J]. PHYSICAL REVIEW B, 2008, 78 (07):
[28] Scaling Analysis of Nanoelectromechanical Memory Devices
Nagami, Tasuku
Tsuchiya, Yoshishige
Uchida, Ken
Mizuta, Hiroshi
Oda, Shunri
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04) : 0443041 - 0443045
[29] Towards quantum entanglement in nanoelectromechanical devices
Eisert, J
Plenio, MB
Bose, S
Hartley, J
[J]. PHYSICAL REVIEW LETTERS, 2004, 93 (19) : 190402 - 1
[30] Virus detection using nanoelectromechanical devices
Ilic, B
Yang, Y
Craighead, HG
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (13) : 2604 - 2606

← 1 2 3 4 5 →