Triangle Current Controlled Relaxation Oscillations in Ge2Sb2Te5 Based Phase Change Memory Devices

被引：1
|
作者：
Wang, Yuchan [1 ,2 ]
Chen, Xiaogang [1 ]
Song, Zhitang [1 ]
Li, Shunfen [1 ]
Wang, Zhaomin [1 ]
Zhang, Yiyun [1 ,2 ]
机构：
[1] Chinese Acad Sci, State Key Lab Funct Mat Informat & Nanotechnol La, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Grad Univ, Beijing 10080, Peoples R China
来源：
ECS SOLID STATE LETTERS | 2012年 / 1卷 / 06期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1149/2.015206ssl
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The relaxation oscillation, which is believed to be related to threshold switching, has been investigated by applying the phase change memory devices the square and triangle current pulses. The results have been presented and analyzed. The unstable conductive filament is used to explain the mechanism of the oscillations. And the oscillation frequency is proved to be proportional to the current pulse amplitude. From the measured I-V curve, it can further indicate that oscillation behavior is an inherent behavior for phase change devices in threshold switching. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.015206ssl] All rights reserved.
引用
收藏
页码：M32 / M34
页数：3
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