Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots

被引：0

作者：

Gargallo-Caballero, R. ^{[2
]}

Guzman, A. ^{[2
]}

Ulloa, J. M. ^{[2
]}

Hierro, A. ^{[2
]}

Hopkinson, M. ^{[3
]}

Luna, E. ^{[1
]}

Trampert, A. ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[2] Univ Politecn Madrid, ISOM, Dept Ingn Elect, ETSI Telecomunicac, E-28040 Madrid, Spain

[3] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 08期

关键词：

DILUTE NITRIDES; GROWTH; GAAS; EMISSION; LASERS; LAYERS;

D O I：

10.1063/1.4706559

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we demonstrate the dependence of the nitrogen incorporation on the Ga/In content into (In,Ga)(As,N) quantum dots (QDs) grown on GaAs (100) by radio-frequency plasma assisted molecular beam epitaxy (MBE). Morphological analysis by atomic force microscopy and cross-sectional transmission electron microscopy, together with an estimation of the transition thickness, monitored in situ during the growth, predict a maximum in the N incorporation for 30% Ga content. This result is confirmed by photoluminescence measurements of the as-grown and post-growth annealed samples. We attribute this behavior to a trade off between two mechanisms depending on the Ga/In content: one related to the stability of the Ga-N bond, and the other related to the surface strain and/or In segregation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4706559]

引用

页数：7

共 50 条

[21] Exciton localization and quantum efficiency - A comparative cathodoluminescence study of (In,Ga)N/GaN and GaN/(Al,Ga)N quantum wells
Jahn, U
Dhar, S
Brandt, O
Grahn, HT
Ploog, KH
Watson, IM
JOURNAL OF APPLIED PHYSICS, 2003, 93 (02) : 1048 - 1053
[22] Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing
Gargallo-Caballero, R.
Guzman, A.
Hopkinson, M.
Ulloa, J. M.
Hierro, A.
Calleja, E.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 6, 2009, 6 (06): : 1441 - +
[23] N-induced Quantum Dots in GaAs/Ga(N, As) Core/Shell Nanowires: Symmetry, Strain, and Electronic Structure
Jansson, M.
Ishikawa, F.
Chen, W. M.
Buyanova, I. A.
PHYSICAL REVIEW APPLIED, 2018, 10 (04):
[24] The band structure of Ga(N,As) and (Ga,In)(N,As) semiconductors and their heterostructures
Heimbrodt, W
Grüning, H
Klar, PJ
Koch, J
Schäfer, S
Stolz, W
Saadi, AMK
Lindsay, A
PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2001, 2 : 289 - 292
[25] Influence of Mg doping on In adsorption and In incorporation in (In,Ga)N superlattices
Kusdemir, Erdi
Cheze, Caroline
Calarco, Raffaella
JOURNAL OF APPLIED PHYSICS, 2020, 128 (08)
[26] Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots
E. S. Shatalina
S. A. Blokhin
A. M. Nadtochy
A. S. Payusov
A. V. Savelyev
M. V. Maximov
A. E. Zhukov
N. N. Ledentsov
A. R. Kovsh
S. S. Mikhrin
V. M. Ustinov
Semiconductors, 2010, 44 : 1308 - 1312
[27] Polarity dependence of Mn incorporation in (Ga,Mn)N superlattices
Tropf, L.
Kunert, G.
Jakiela, R.
Wilhelm, R. A.
Figge, S.
Grenzer, J.
Hommel, D.
JOURNAL OF CRYSTAL GROWTH, 2016, 437 : 49 - 52
[28] Analysis of Mechanisms of Carrier Emission in the p-i-n Structures with In(Ga)As Quantum Dots
Shatalina, E. S.
Blokhin, S. A.
Nadtochy, A. M.
Payusov, A. S.
Savelyev, A. V.
Maximov, M. V.
Zhukov, A. E.
Ledentsov, N. N.
Kovsh, A. R.
Mikhrin, S. S.
Ustinov, V. M.
SEMICONDUCTORS, 2010, 44 (10) : 1308 - 1312
[29] Ga-Polar (In,Ga) N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency
Feix, F.
Flissikowski, T.
Sabelfeld, K. K.
Kaganer, V. M.
Woelz, M.
Geelhaar, L.
Grahn, H. T.
Brandt, O.
PHYSICAL REVIEW APPLIED, 2017, 8 (01):
[30] Universal Ratio of Coulomb Interaction to Geometric Quantization in (In, Ga)As/GaAs Quantum Dots
M. Bayer
A. Ludwig
A. Wieck
Physics of the Solid State, 2018, 60 : 1629 - 1634

← 1 2 3 4 5 →