Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots

被引：0

作者：

Gargallo-Caballero, R. ^{[2
]}

Guzman, A. ^{[2
]}

Ulloa, J. M. ^{[2
]}

Hierro, A. ^{[2
]}

Hopkinson, M. ^{[3
]}

Luna, E. ^{[1
]}

Trampert, A. ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[2] Univ Politecn Madrid, ISOM, Dept Ingn Elect, ETSI Telecomunicac, E-28040 Madrid, Spain

[3] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 08期

关键词：

DILUTE NITRIDES; GROWTH; GAAS; EMISSION; LASERS; LAYERS;

D O I：

10.1063/1.4706559

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we demonstrate the dependence of the nitrogen incorporation on the Ga/In content into (In,Ga)(As,N) quantum dots (QDs) grown on GaAs (100) by radio-frequency plasma assisted molecular beam epitaxy (MBE). Morphological analysis by atomic force microscopy and cross-sectional transmission electron microscopy, together with an estimation of the transition thickness, monitored in situ during the growth, predict a maximum in the N incorporation for 30% Ga content. This result is confirmed by photoluminescence measurements of the as-grown and post-growth annealed samples. We attribute this behavior to a trade off between two mechanisms depending on the Ga/In content: one related to the stability of the Ga-N bond, and the other related to the surface strain and/or In segregation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4706559]

引用

页数：7

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