Room-temperature ferromagnetism in un-doped ZrO2 thin films

被引：61
|
作者：
Ning, Shuai [1 ]
Zhan, Peng [1 ]
Xie, Qian [1 ]
Li, Zhengcao [1 ]
Zhang, Zhengjun [1 ]
机构：
[1] Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2013年 / 46卷 / 44期
基金：
中国国家自然科学基金;
关键词：
ZIRCONIA; DEFECTS; PHOTOLUMINESCENCE; NANOPARTICLES;
D O I：
10.1088/0022-3727/46/44/445004
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Room-temperature ferromagnetism was observed in un-doped ZrO2 thin films prepared by pulsed electron beam deposition on silicon substrates. In the obtained films, monoclinic and tetragonal phases were both stabilized, with a ratio depending on the oxygen partial pressure during deposition. The ferromagnetism was positively related to the tetragonal phase content, and had a positive linear relationship with the photoluminescence (PL) intensity of emission centred at similar to 420 nm related to the singly ionized oxygen vacancies, as revealed further by the PL analysis. This study suggested that the oxygen vacancies, which stabilized the tetragonal phase at room-temperature, should be the origin of ferromagnetism in un-doped ZrO2 films.
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页数：5
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