COMPARATIVE STUDY OF A PIN HOMOJUNCTION A-Si:H SOLAR CELL

被引：0
|
作者：
Ayat, L. [1 ]
Nour, S. [1 ]
Meftah, A. [2 ]
机构：
[1] Univ Tahri Mohamed, Lab Semicond Devices Phys, PB 417, Bechar 08000, Algeria
[2] Univ Biskra, LMSM, BP 145, Biskra 07000, AP, Algeria
来源：
JOURNAL OF OVONIC RESEARCH | 2019年 / 15卷 / 01期
关键词：
Amorphous silicon; Solar cells; Simulation;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hydrogenated amorphous silicon (a-Si:H) has been widely investigated as a viable material for inexpensive and efficient solar cells. The paper presents a numerical simulation of the output parameters of a PIN a-Si:H solar cell under AM1.5 spectrum. These parameters are the short circuit current (J(sc)), the open circuit voltage (V-oc), the fill factor (FF), the conversion efficiency (eta) and the spectral response (SR). The simulation was performed with SCAPS-1D software version 3.2 developed at ELIS in Belgium by Marc Burgelman et al. The obtained results are in agreement with experiment. In addition, the effect of the intrinsic layer thickness (I) on the output parameters of the cell is also presented. It was found that a intrinsic layer thickness of 0.3 mu m consists the optimum value for the cell efficiency.
引用
收藏
页码：89 / 94
页数：6
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