Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-channel MOSFETs

被引：5

作者：

Uhnevionak, V. ^{[1
,5
]}

Strenger, C. ^{[2
,5
]}

Burenkov, A. ^{[1
,5
]}

Mortet, V. ^{[3
,4
,5
]}

Bedel-Pereira, E. ^{[3
,4
,5
]}

Cristiano, F. ^{[3
,4
,5
]}

Bauer, A. ^{[1
,5
]}

Pichler, P. ^{[1
,2
,5
]}

机构：

[1] Fraunhofer IISB, Schottkystr 10, D-91058 Erlangen, Germany

[2] Chair Elect Dev, D-91058 Erlangen, Germany

[3] CNRS, LAAS, F-31400 Toulouse, France

[4] Univ Toulouse 1, LAAS, F-31400 Toulouse, France

[5] WISEA, Alliance, OH 44601 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷

关键词：

4H-SiC MOSFETs; SiC/SiO2; interface; NIT; donor and acceptor types of traps; IMPLANTATION;

D O I：

10.4028/www.scientific.net/MSF.740-742.533

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

4H-SiC n-channel lateral MOSFETs were manufactured and characterized electrically by current-voltage measurements and by numerical simulation. To describe the observed electrical characteristics of the SiC MOSFETs, Near-Interface Traps (NIT) and mobility degradation models were included in the simulation. The main finding of the simulation is that two models for the NIT states in the upper part of the SiC bandgap are able to describe the electrical data equally well. In one of them, acceptor-like traps and fixed charge are considered while in a newly developed one, donor-like traps are taken into account also.

引用

页码：533 / +

页数：2

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