Systematic Approach for the Gate Oxide Failure Caused by Arsenic Cross Contamination

被引：0

作者：

Zhu, Lei ^{[1
]}

Ng, Huipeng ^{[1
]}

Huang, Yanhua ^{[1
]}

Teo, Hanwei ^{[1
]}

Ong, Kenny ^{[1
]}

Chen, Shuting ^{[1
]}

Chen, Changqing ^{[1
]}

Ang, Ghimboon ^{[1
]}

Hua, Younan ^{[1
]}

Li, Zheng ^{[1
]}

机构：

[1] GLOBALFOUNDRIES Singapore Pte Ltd, QRA, Failure Anal Dept, Singapore 738406, Singapore

来源：

ISTFA 2012: CONFERENCE PROCEEDINGS FROM THE 38TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS | 2012年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper described a gate oxide failure case which affected the electrical parameters such as Vt and Idsat of both HV N&P MOS. A systematic problem solving approach combined with several FA techniques was applied to find the root-cause to be arsenic outgas cross-contamination.

引用

页码：207 / 210

页数：4

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