Synthesis of N-deficient indium nitride nanowires and their room-temperature ferromagnetism

被引：9
|
作者：
Lei, M. [1 ,2 ]
Fu, X. L. [1 ,2 ]
Yang, H. J. [1 ]
Wang, Y. G. [1 ]
Zhang, Y. B. [1 ]
Huang, Y. T. [1 ]
Zhang, L. [1 ]
机构：
[1] Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China
[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
来源：
MATERIALS LETTERS | 2012年 / 73卷
基金：
中国国家自然科学基金;
关键词：
Semiconductors; Magnetic materials; Microstructure; ELECTRON-TRANSPORT; ALN NANOWIRES; GROWTH; INN; GAN; SURFACE;
D O I：
10.1016/j.matlet.2012.01.042
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High-purity indium nitride (InN) nanowires were synthesized by a facile direct nitridation method. The characterizations of composition and microstructure reveal that the nanowires are N-deficient InN0.866 grown along c axis. The diameter of the nanowires is in the range of 60-90 nm and the length is up to tens of micrometers. TEM measurement indicates that the nanowires are well crystalline and obvious bulk defects are not observed. Unusual room-temperature ferromagnetism order was detected in the nanowires. It is suggested that a large number of point defects e.g. N vacancies and In interstitials should be responsible for the ferromagnetism order. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：166 / 168
页数：3
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