Epitaxial growth of Ge film on 6H-SiC(0001) by LPCVD

被引：0
|
作者：
Han, Y. L. [1 ]
Pu, H. B. [1 ]
Zang, Y. [1 ]
Li, L. B. [1 ,2 ]
机构：
[1] Xian Univ Technol, Dept Elect Engn, Xian, Peoples R China
[2] Xian Polytech Univ, Sch Sci, Xian, Peoples R China
来源：
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2016年 / 10卷 / 9-10期
基金：
中国国家自然科学基金;
关键词：
SiC/Ge heterostructure; LPCVD; Oswald coalescence; Stranski-Krastanow mode; HETEROSTRUCTURE;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ge thin films were prepared on 6H-SiC(0001) substrates by low-pressure chemical vapor deposition. X-ray diffraction, Scanning electron Microscope and Raman spectroscopy were applied to characterize the Ge/6H-SiC heterostructures. XRD spectra shows that only one peak is located at 2 theta=26.68 degrees, which indicated that Ge films grow preferentially along < 111 > crystalline orientation on 6H-SiC(0001) Si-face at 850 degrees C. The epitaxial growth of the Ge film follows the Stranski-Krastanow mode, Ge spherical islands form on the two-dimensional layer with a critical thickness of 7.5nm.
引用
收藏
页码：737 / 739
页数：3
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