Sb-mediated Ge quantum dots in Ti-oxide-Si diode: negative differential capacitance

被引：1
|
作者：
Rangel-Kuoppa, Victor-Tapio [1 ]
Tonkikh, Alexander [2 ,3 ]
Werner, Peter [2 ]
Jantsch, Wolfgang [1 ]
机构：
[1] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria
[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[3] Inst Phys Microstruct RAS, Nizhnii Novgorod, Russia
来源：
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS | 2013年 / 14卷 / 03期
关键词：
Ge quantum dots; Ge quantum pyramids; CV; negative differential capacitance; metal oxide semiconductor; LEVEL TRANSIENT SPECTROSCOPY; SILICON; VOLTAGE; FILMS; DLTS;
D O I：
10.1088/1468-6996/14/3/035005
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The negative differential capacitance (NDC) effect is observed on a titanium-oxide-silicon structure, formed on n-type silicon with embedded germanium quantum dots (QDs). The Ge QDs were grown by an Sb-mediated technique. The NDC effect was observed for temperatures below 200 K. We found that approximately six to eight electrons can be trapped in the valence band states of Ge QDs. We explain the NDC effect in terms of the emission of electrons from valence band states in the very narrow QD layer under reverse bias.
引用
收藏
页数：7
相关论文
共 49 条
  • [41] Coulomb blockade and negative differential resistance at room temperature: Self-assembled quantum dots on Si (110) surface
    Mohottige, Rasika N.
    Banerjee, Soumya
    Oncel, Nuri
    SURFACE SCIENCE, 2018, 677 : 12 - 17
  • [42] Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots
    Yakimov, AI
    Dvurechenskii, AV
    Proskuryakov, YY
    Nikiforov, AI
    Pchelyakov, OP
    Teys, SA
    Gutakovskii, AK
    APPLIED PHYSICS LETTERS, 1999, 75 (10) : 1413 - 1415
  • [43] Coulomb blockade induced negative differential resistance effect in a self-assembly Si quantum dots array at room temperature
    Yu, L. W.
    Chen, K. J.
    Song, J.
    Wang, J. M.
    Xu, J.
    Li, W.
    Huang, X. F.
    THIN SOLID FILMS, 2007, 515 (13) : 5466 - 5470
  • [44] Self-assembling of Ge quantum dots in the CaF2/Ge/CaF2/Si heteroepitaxial system and the development of tunnel-resonance diode on its basis
    Sokolov, LV
    Deryabin, AS
    Yakimov, AI
    Pchelyakov, OP
    Dvurechenskii, AV
    PHYSICS OF THE SOLID STATE, 2004, 46 (01) : 89 - 91
  • [45] Self-assembling of Ge quantum dots in the CaF2/Ge/CaF2/Si heteroepitaxial system and the development of tunnel-resonance diode on its basis
    L. V. Sokolov
    A. S. Deryabin
    A. I. Yakimov
    O. P. Pchelyakov
    A. V. Dvurechenskii
    Physics of the Solid State, 2004, 46 : 89 - 91
  • [46] Metal organic chemical vapor deposition growth of high density InAs/Sb:GaAs quantum dots on Ge/Si substrate and its electroluminescence at room temperature
    Rajesh, Mohan
    Tanabe, Katsuaki
    Kako, Satoshi
    Kawaguchi, Kenichi
    Nishioka, Masao
    Arakawa, Yasuhiko
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (04)
  • [47] Deep Level Assessment of n-Type Si/SiO2 Metal-Oxide-Semiconductor Capacitors with Embedded Ge Quantum Dots
    Aouassa, M.
    Vrielinck, H.
    Simoen, E.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2018, 7 (02) : P24 - P28
  • [48] Deep Level Assessment of n-type Si/SiO2 Metal-Oxide-Semiconductor Capacitors with Embedded Ge Quantum Dots
    Aouassa, M.
    Vrielinck, H.
    Simoen, E.
    SEMICONDUCTOR PROCESS INTEGRATION 10, 2017, 80 (04): : 181 - 190
  • [49] Negative surface charge-mediated Fe Quantum dots with N-doped graphene/Ti3C2Tx MXene as chlorine-resistance electrocatalysts for high performance seawater-based Al-air batteries
    Kim, Seonghee
    Yang, Hyeonsu
    Jeong, Soyoon
    Lee, Taewoong
    Chae, Seongwook
    Lee, Jin Hong
    Li, Oi Lun
    JOURNAL OF POWER SOURCES, 2023, 566
12345