Low power and low noise p-HEMT Ku band VCO

被引：6
|
作者：
Manan, V [1 ]
Long, SL [1 ]
机构：
[1] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2006年 / 16卷 / 03期
关键词：
figure of merit (FOM); high electron mobility transistor (HEMT); phase noise; voltage-controlled oscillator (VCO);
D O I：
10.1109/LMWC.2006.869856
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we report a differential 12-GHz voltage-controlled oscillator (VCO) implemented using a commercial GaAs pseudomorphic high electron mobility transistor (p-HEMT) process. The VCO can operate with 3 mW of de power. The single-side-band phase noise at 1-MHz offset from the carrier is -116 dBc and is achieved with 15 mW of dc power consumption. This VCO has a figure of merit of -190.5 dBc which is the best that has been reported for a p-HEMT VCO in the authors' knowledge.
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页码：131 / 133
页数：3
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