Structure and electrical characteristics of RF magnetron sputtered MgTiO3

The crystal structure and dielectric properties of MgTiO3 films were investigated. In this article, MgTiO3 thin films were fabricated on n-type Si(100) substrates by reactive RF rnagnetron sputtering at various Ar/O-2 mixing rations (100/0, 90/10, 80/20, 70/30), substrate temperatures (200 degrees C, 300 degrees C and 400 degrees C), at a RE power of 400 W and sputtering times (from I to 3 h). It was possible to obtain highly oriented MgTiO3 (110) thin film at a RE power of 400 W and substrate temperature of 200 degrees C, 300 degrees C and 400 degrees C, Ar/O-2 rations (100/0, 90/10, 80/20) for 2 h, which is much lower than the bulk sintering temperature. These films were studied by choosing an RF of 400 W and various substrate temperatures. The microstructure and surface morphology of the MgTiO3 films deposited on n-Si(100) was determined by X-ray diffraction (XRD), scanning electron rnicroscopy (SEM), and atomic force microscopy (AFM). The XRD showed that the deposited films exhibited a polycrystalline microstructure. The grain size of the film increased with substrate temperature. The electrical proper-ties were measured using C-Vand current-voltage I-V measurements on metal-insulator-semiconductor (MIS) capacitor structures. As RE power of 400 W and substrate temperature of 400 degrees C, dielectric constant is 16.2 (f=10 MHz). (c) 2005 Elsevier B.V. All rights reserved.