Influence of impurities on the photoluminescence of modified InP crystals

被引：0
|
作者：
Baimbetov, FB [1 ]
Dzhumamukhambetov, NG [1 ]
机构：
[1] Atyrau Univ, Atyrau, Kazakhstan
来源：
TECHNICAL PHYSICS | 1999年 / 44卷 / 04期
关键词：
Emission Band; Common Property; Lattice Defect; Photoluminescence Spectrum; Defect State;
D O I：
10.1134/1.1259318
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is shown that a new emission band at 1.35 eV (77 K) is observed in the photoluminescence spectra of laser-modified InP crystals, irrespective of the type of impurity or its concentration in the initial crystal. It is established that the emergence of this band is a common property of the lattice defect state of the modified semiconductors. (C) 1999 American Institute of Physics. [S1063-7842(99)01904-2].
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页码：450 / 451
页数：2
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