Influence of impurities on the photoluminescence of modified InP crystals

被引：0
|
作者：
Baimbetov, FB [1 ]
Dzhumamukhambetov, NG [1 ]
机构：
[1] Atyrau Univ, Atyrau, Kazakhstan
来源：
TECHNICAL PHYSICS | 1999年 / 44卷 / 04期
关键词：
Emission Band; Common Property; Lattice Defect; Photoluminescence Spectrum; Defect State;
D O I：
10.1134/1.1259318
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is shown that a new emission band at 1.35 eV (77 K) is observed in the photoluminescence spectra of laser-modified InP crystals, irrespective of the type of impurity or its concentration in the initial crystal. It is established that the emergence of this band is a common property of the lattice defect state of the modified semiconductors. (C) 1999 American Institute of Physics. [S1063-7842(99)01904-2].
引用
收藏
页码：450 / 451
页数：2
相关论文
共 50 条
  • [1] Influence of impurities on the photoluminescence of modified InP crystals
    F. B. Baimbetov
    N. G. Dzhumamukhambetov
    Technical Physics, 1999, 44 : 450 - 451
  • [2] PHOTOLUMINESCENCE OF INP AND INP-FE CRYSTALS WITH IMPLANTED MAGNESIUM IMPURITIES
    GEORGOBIANI, AN
    MIKULENOK, AV
    RAVICH, VN
    STOYANOVA, IG
    TIGINYANU, IM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (12): : 1391 - 1392
  • [3] STATE OF YB-IMPURITIES IN INP CRYSTALS
    KASATKIN, VA
    MASTEROV, VF
    ROMANOV, VV
    SAMORUKOV, BE
    SHTELMAKH, KF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (01): : 106 - 107
  • [4] RECOMBINATION PHOTOLUMINESCENCE OF HOT-ELECTRONS IN INP CRYSTALS
    KARLIK, IY
    MIRLIN, DN
    SAPEGA, VF
    FIZIKA TVERDOGO TELA, 1985, 27 (07): : 2210 - 2211
  • [5] Effect of impurities on Raman and photoluminescence spectra of AIN bulk crystals
    Sarua, A
    Rajasingam, S
    Kuball, M
    Garro, N
    Sancho, O
    Cros, A
    Cantarero, A
    Olguin, D
    Liu, B
    Zhuang, D
    Edgar, JH
    GAN AND RELATED ALLOYS - 2003, 2003, 798 : 297 - 302
  • [6] HOT PHOTOLUMINESCENCE AND VALENCE BAND WARPING IN GAAS AND INP CRYSTALS
    ALEKSEEV, MA
    KARLIK, IY
    MERKULOV, IA
    MIRLIN, DN
    SAPEGA, VF
    PHYSICS LETTERS A, 1988, 127 (6-7) : 373 - 378
  • [7] SPECTRUM OF PHOTOLUMINESCENCE OF HOT CHARGE-CARRIERS IN INP CRYSTALS
    ZEMSKII, VI
    KATILYUS, R
    MIRLIN, DN
    FIZIKA TVERDOGO TELA, 1974, 16 (12): : 3736 - 3738
  • [8] Influence of doping in InP buffer on photoluminescence behavior of InPBi
    Wang, Peng
    Pan, Wenwu
    Cao, Chunfang
    Wu, Xiaoyan
    Wang, Shumin
    Gong, Qian
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (11)
  • [9] THE INFLUENCE OF IMPURITY CONCENTRATION ON EXCITON PHOTOLUMINESCENCE IN GAAS AND INP
    PEN, HF
    DRIESSEN, FAJM
    OLSTHOORN, SM
    GILING, LJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (11) : 1400 - 1406
  • [10] PHOTOLUMINESCENCE OF MODIFIED GAAS-TE CRYSTALS
    DZHUMAMUKHAMBETOV, NG
    DMITRIEV, AG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (10): : 1192 - 1193
12345