Advanced fabrication technologies for nano-electronics

Three novel fabrication technologies are presented which greatly increase the tools available for the realization of nano-electronic devices. First, a sub-micron area post structure descending from a metallic airbridge allows gating of regions as small as 0.1 mu m in diameter. This has enabled the study of such quantum phenomena as coupling of parallel quantum point contacts, and electron focusing around a tunable quantum antidot. We also describe two new techniques for backgating multiquantum well structures with submicron lateral resolution. These techniques enable separate ohmic contacts to individual quantum wells spaced as closely as 100 Angstrom, and thus allow the fabrication of novel quantum tunneling devices. The first technique uses regrowth over a patterned ion-implanted substrate. The second involves a novel epoxy-bond-and-stop-etch (EBASE) processing scheme, whereby the original substrate is etched away and the backside then patterned using conventional methods.