High-frequency properties of an abrupt heterojunction diode

被引：0

作者：

Horák, M ^{[1
]}

机构：

[1] Brno Univ Technol, Fac Elect Engn Comp Sci, Dept Microelect, CZ-60200 Brno, Czech Republic

来源：

EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS | 2001年

关键词：

D O I：

10.1109/EDMO.2001.974284

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Steady state and high frequency transmittance of the potential barrier at the abrupt Np+-heterojunction is investigated. A general method of simulation based on the one-electron tunnelling and the time-dependent hamiltonian is presented. Numerical results are obtained for a model structure of the N-AlGaAs/p(+)-GaAs diode within the approximation of one and two energy quanta emission or absorption.

引用

页码：61 / 66

页数：6

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