Highly stable Low Noise/High Power AlN/GaN-on-Silicon Double Heterostructure HEMTs operating at 40 GHz

被引：0

作者：

Medjdoub, F. ^{[1
]}

Tagro, Y. ^{[1
]}

Grimbert, B. ^{[1
]}

Ducatteau, D. ^{[1
]}

Rolland, N. ^{[1
]}

Silvestri, R. ^{[2
]}

Meneghini, M. ^{[2
]}

Zanoni, E. ^{[2
]}

Meneghesso, G. ^{[2
]}

机构：

[1] Univ Lille 1, Ctr Hyperfrequences & Semicond, CNRS, IEMN, F-59655 Villeneuve Dascq, France

[2] Univ Padua, Dept Informat Engn, Padua, Italy

来源：

2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2013年

关键词：

component; formatting; style; styling; insert (key words);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an emerging double heterostructure high electron mobility transistor (DHFET) based on AlN/GaN/AlGaN grown on silicon substrate is presented. This configuration system allowed state-of-the-art GaN-on-silicon DC, RF output power and noise performances at 40 GHz, paving the way for high performance mmW cost-effective amplifiers. Preliminary reliability assessment has been performed on this new class of RF devices, showing promising mmW GaN-on-Si device stability for the first time.

引用

页数：6

共 37 条

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