Highly stable Low Noise/High Power AlN/GaN-on-Silicon Double Heterostructure HEMTs operating at 40 GHz

被引：0
|
作者：
Medjdoub, F. [1 ]
Tagro, Y. [1 ]
Grimbert, B. [1 ]
Ducatteau, D. [1 ]
Rolland, N. [1 ]
Silvestri, R. [2 ]
Meneghini, M. [2 ]
Zanoni, E. [2 ]
Meneghesso, G. [2 ]
机构：
[1] Univ Lille 1, Ctr Hyperfrequences & Semicond, CNRS, IEMN, F-59655 Villeneuve Dascq, France
[2] Univ Padua, Dept Informat Engn, Padua, Italy
来源：
2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2013年
关键词：
component; formatting; style; styling; insert (key words);
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, an emerging double heterostructure high electron mobility transistor (DHFET) based on AlN/GaN/AlGaN grown on silicon substrate is presented. This configuration system allowed state-of-the-art GaN-on-silicon DC, RF output power and noise performances at 40 GHz, paving the way for high performance mmW cost-effective amplifiers. Preliminary reliability assessment has been performed on this new class of RF devices, showing promising mmW GaN-on-Si device stability for the first time.
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页数：6
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