The vacancy formation and migration enthalpies H-f and H-m in tantalum are calculated by means of ab initio pseudopotential techniques. The results obtained after relaxation with supercells containing 54 atomic sites (H-f = 3.0 eV and H-m = 0.8 eV) are in excellent agreement with experiments (H-f = 3.1 eV and H-m = 0.7 eV). The electronic entropy has a moderate influence on their temperature dependence. The effects of structural relaxation, which reduce H-f by 14%, are significantly larger than for group-VI elements and are typical of a normal behavior for the bcc structure. The experimental tracer self-diffusion coefficient is well reproduced within the rate theory using an estimate of the vibrational formation entropy and the attempt frequency. [S0163-1829(99)12133-7].
机构:
China Jiliang Univ, Coll Opt & Elect Technol, Hangzhou 310018, Zhejiang, Peoples R ChinaChina Jiliang Univ, Coll Opt & Elect Technol, Hangzhou 310018, Zhejiang, Peoples R China
Liu Yang
Liang Pei
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China Jiliang Univ, Coll Opt & Elect Technol, Hangzhou 310018, Zhejiang, Peoples R China
S China Univ Technol, Dept Phys, Guangzhou 510640, Peoples R ChinaChina Jiliang Univ, Coll Opt & Elect Technol, Hangzhou 310018, Zhejiang, Peoples R China
Liang Pei
Shu Hai-Bo
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China Jiliang Univ, Coll Opt & Elect Technol, Hangzhou 310018, Zhejiang, Peoples R ChinaChina Jiliang Univ, Coll Opt & Elect Technol, Hangzhou 310018, Zhejiang, Peoples R China
Shu Hai-Bo
Cao Dan
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China Jiliang Univ, Coll Sci, Hangzhou 310018, Zhejiang, Peoples R ChinaChina Jiliang Univ, Coll Opt & Elect Technol, Hangzhou 310018, Zhejiang, Peoples R China
Cao Dan
Dong Qian-Min
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China Jiliang Univ, Coll Opt & Elect Technol, Hangzhou 310018, Zhejiang, Peoples R ChinaChina Jiliang Univ, Coll Opt & Elect Technol, Hangzhou 310018, Zhejiang, Peoples R China
Dong Qian-Min
Wang Le
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China Jiliang Univ, Coll Opt & Elect Technol, Hangzhou 310018, Zhejiang, Peoples R ChinaChina Jiliang Univ, Coll Opt & Elect Technol, Hangzhou 310018, Zhejiang, Peoples R China
机构:
Univ Autonoma Chihuahua UACH, Fac Ciencias Quim, Circuito Univ S-N,Campus UACH 2, Chihuahua 31125, Chih, MexicoUniv Autonoma Chihuahua UACH, Fac Ciencias Quim, Circuito Univ S-N,Campus UACH 2, Chihuahua 31125, Chih, Mexico
Hernandez-Vazquez, Esther Elena
Lopez-Moreno, Sinhue
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IPICYT, CONAHCYT Div Mat Avanzados, Camino Presa San Jose 2055 Col Lomas Secc 4a, San Luis Potosi 78216, Mexico
IPICYT, Ctr Nacl Supercomputo, Grp Ciencia & Ingn Computac, Camino Presa San Jose 2055 Col Lomas Secc 4a, San Luis Potosi 78216, MexicoUniv Autonoma Chihuahua UACH, Fac Ciencias Quim, Circuito Univ S-N,Campus UACH 2, Chihuahua 31125, Chih, Mexico
Lopez-Moreno, Sinhue
Ponce-Tadeo, Ana Paulina
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IPICYT, Ctr Nacl Supercomputo, Grp Ciencia & Ingn Computac, Camino Presa San Jose 2055 Col Lomas Secc 4a, San Luis Potosi 78216, Mexico
IPICYT, Div Mat Avanzados, Camino Presa San Jose 2055 Col Lomas Secc 4a, San Luis Potosi 78216, MexicoUniv Autonoma Chihuahua UACH, Fac Ciencias Quim, Circuito Univ S-N,Campus UACH 2, Chihuahua 31125, Chih, Mexico
Ponce-Tadeo, Ana Paulina
Moran-Lopez, Jose Luis
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IPICYT, Ctr Nacl Supercomputo, Grp Ciencia & Ingn Computac, Camino Presa San Jose 2055 Col Lomas Secc 4a, San Luis Potosi 78216, Mexico
IPICYT, Div Mat Avanzados, Camino Presa San Jose 2055 Col Lomas Secc 4a, San Luis Potosi 78216, MexicoUniv Autonoma Chihuahua UACH, Fac Ciencias Quim, Circuito Univ S-N,Campus UACH 2, Chihuahua 31125, Chih, Mexico