Numerical Modeling of InxGa1-xN Silicon Multi-Junction Tandem Solar Cell

被引：0

作者：

Hsieh, Ming-Han ^{[1
]}

Wu, Yuh-Renn ^{[1
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

来源：

2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2012年

关键词：

Tandem solar cells; multi-junction solar cell; tunneling layer; InGaN; silicon; ALLOYS;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper discusses the performance of the silicon based InxGa1-xN multi-junction tandem solar cells. For the double-junction tandem solar cell, the optimized condition of In composition and layer thickness of crystalline Si for the highest efficiency are studied. A In0.40Ga0.60N p-n junction layer with 0.5 mu m layer thickness provides the highest efficiency from our simulation. For the triple-junction tandem solar cell, we find that a In38Ga62N/ In56Ga44N/ silicon with 0.75 mu m, 0.75 mu m, and 10.0 mu m Si layer thickness could reach 39.50 % efficiency.

引用

页码：2052 / 2055

页数：4

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