Ion-induced pattern formation on indium tin oxide for alignment of liquid crystals

被引:3
|
作者
Skeren, T. [1 ,2 ]
Doornaert, D. [3 ,4 ]
Glorieux, C. [3 ]
Modarresi, H. [1 ]
Guan, T. [5 ]
Temst, K. [1 ]
Vandervorst, W. [1 ,6 ]
Vantomme, A. [1 ]
机构
[1] Katholieke Univ Leuven, Inst Kern & Stralingsfys, B-3001 Leuven, Belgium
[2] Czech Tech Univ, Fac Nucl Sci & Phys Engn, CR-11519 Prague 1, Czech Republic
[3] Katholieke Univ Leuven, Dept Phys & Astron, Lab Acoust & Thermal Phys, B-3001 Heverlee, Belgium
[4] Katholieke Univ Leuven, Wave Propagat & Signal Proc Res Grp, B-8500 Kortrijk, Belgium
[5] Katholieke Univ Leuven, Dept Elektrotech ESAT MICAS, B-3001 Leuven, Belgium
[6] IMEC, B-3001 Leuven, Belgium
关键词
Ripple formation; Ion-induced pattern formation; Liquid crystal alignment; Indium-tin oxide; RIPPLE TOPOGRAPHY; PLASMA BEAM; THIN-FILMS; EVOLUTION; SURFACES; ITO;
D O I
10.1016/j.tsf.2015.05.048
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Indium tin oxide (ITO) is broadly used as a transparent conducting material for electrodes in optoelectronic devices. Irradiation of ITO with low energy ions can result in the formation of periodic surface nanopatterns which can serve as an alternative for the polymer alignment layer in liquid crystal devices. We investigated the formation of the ion-induced surface nanopatterns on ITO with focus on the influence of the crystalline structure of the material. We find that the crystallinity plays a crucial role in the pattern formation, with no pattern developing on an amorphous ITO surface. We discuss these findings in the context of the state-of-the-art theory for ion-induced patterning. We show that the ion-induced pattern plays a critical role in the liquid crystal alignment on ITO surfaces. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:315 / 321
页数:7
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