Properties of hydrogenated amorphous silicon carbide films prepared at various hydrogen gas flow rates by hot-wire chemical vapor deposition

被引：12

作者：

Mori, M ^{[1
]}

Tabata, A ^{[1
]}

Mizutani, T ^{[1
]}

机构：

[1] Nagoya Univ, Dept Elect Engn & Comp Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

THIN SOLID FILMS | 2006年 / 501卷 / 1-2期

关键词：

hot-wire chemical vapor deposition; amorphous material; silicon carbide; wide band gap;

D O I：

10.1016/j.tsf.2005.07.186

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We prepared hydrogenated amorphous silicon carbide thin films using SiH4, CH4 and H-2 gases by the hot-wire chemical vapor deposition method and investigated the influence of hydrogen gas flow rate, F(H-2), Oil their film properties. For F(H-2) between 10 and 100 seem, two groups of films were obtained: high E-g opt. (group H) and low E-g opt. (group L). The E-g opt in group H decreased from 2.27 to 2.14 eV when F(H-2) increased from 10 to 100 seem, and the E-g opt. in group L decreased from 1.93 to 1.78 eV when F(H-2) increased from 50 to 100 seem. The difference in E-g opt. between the two groups resulted from differences in the electrical power applied to the W wire and deposition on the W wire. (c) 2005 Elsevier B.V All rights reserved.

引用

页码：177 / 180

页数：4

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