Vertical CdZnO/ZnO Quantum-Well Light-Emitting Diode

被引：5

作者：

Chen, Horng-Shyang ^{[1
,2
]}

Ting, Shao-Ying ^{[1
,2
]}

Liao, Che-Hao ^{[1
,2
]}

Chen, Chih-Yen ^{[1
,2
]}

Hsieh, Chieh ^{[1
,2
]}

Yao, Yu-Feng ^{[1
,2
]}

Chen, Hao-Tsung ^{[1
,2
]}

Kiang, Yean-Woei ^{[1
,2
]}

Yang, Chih-Chung ^{[1
,2
]}

机构：

[1] Natl Taiwan Univ, Inst Photon & Optoelect, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2013年 / 25卷 / 03期

关键词：

CdZnO/ZnO quantum well; vertical light-emitting diode; UV ELECTROLUMINESCENCE;

D O I：

10.1109/LPT.2012.2236085

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A vertical light-emitting diode (VLED) with the CdZnO/n-ZnO quantum wells and n(+)-ZnO capping layer grown with molecular beam epitaxy and the p-GaN layer grown with metalorganic chemical vapor deposition, is fabricated and characterized. Its performances are compared with those of a lateral LED based on the same epitaxial structure to show the significantly lower device resistance, smaller leakage current, weaker output intensity saturation, relatively lower defect emission, and stronger emissions from the p-GaN and n-ZnO layers in the VLED.

引用

页码：317 / 319

页数：3

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