Effect of Discharge Plasma Potential on Diffusion Plasma Parameters Controlled by a Mesh Grid in a Double Plasma Device

被引:3
|
作者
Mishra, M. K. [1 ]
Phukan, A. [2 ]
Chakraborty, M. [3 ]
机构
[1] Baosi Banikanta Kakati Coll, Dept Phys, Barpeta 781311, Assam, India
[2] Madhabdev Coll, Dept Phys, Narayanpur 784164, Assam, India
[3] Inst Plasma Res, Ctr Plasma Phys, Sonapur 782402, Assam, India
关键词
Hot electrons; cold electrons; grid; double plasma device; TEMPERATURE CONTROL; ELECTRONS; VOLTAGE;
D O I
10.1002/ctpp.201200073
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
The plasma region under investigation is separated from the discharge region by a mesh grid. Plasma potential and electron number densities and electron temperatures under bi-Maxwellian approximation for electron distribution function of the multi-dipole argon plasma are measured. The cold electrons in the diffusion region are produced by local ionization. The hot electrons are the ionizing electrons behaving as Maxwellian. The electron trapping process in the discharge region is produced by potential well due to positive plasma potential with respect to the anode and by a repulsive grid. The dependence of ratios of the density of the hot to the cold electrons NE (=Neh/Nec) and hot to cold electron temperature T(=Teh/Tec) in the diffusion region on the depth of the potential well has been investigated. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
引用
收藏
页码:206 / 213
页数:8
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