Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer

被引：96
|
作者：
Cho, Min Hoe [1 ]
Seol, Hyunju [1 ]
Song, Aeran [2 ]
Choi, Seonjun [1 ]
Song, Yunheub [1 ]
Yun, Pil Sang [3 ]
Chung, Kwun-Bum [2 ]
Bae, Jong Uk [3 ]
Park, Kwon-Shik [3 ]
Jeong, Jae Kyeong [1 ]
机构：
[1] Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
[2] Dongguk Univ, Div Phys & Semiconductor Sci, Seoul 04620, South Korea
[3] LG Display Co, Res & Dev Ctr, Paju 413791, South Korea
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 04期
关键词：
Atomic layer deposition (ALD); indium gallium zinc oxide (IGZO); sputtering; thin-film transistors (TFTs); THIN-FILM TRANSISTORS; TEMPERATURE; TRANSPARENT;
D O I：
10.1109/TED.2019.2899586
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The structural, chemical, and electrical properties of amorphous indium gallium zinc oxide (a-IGZO) films by magnetron sputtering and atomic layer deposition (ALD) were investigated where both a-IGZO films had a comparable cation composition. The ALD-derived a-IGZO film exhibited the higher atomic packing density, the effective suppression of trap-like oxygen vacancy defect (VO), and the enhancement in the hybridization of the sp orbital of In, Ga, and Zn cations compared to those of the sputtered a-IGZO film. Hence, a significant improvement in terms of the field-effect mobility was observed for the thin-film transistors with an In0.50Ga0.34Zn0.16O channel by ALD (36.6 cm(2)/V.s) compared to that of the sputtered In0.48Ga0.38Zn0.14O transistor (20.1 cm(2)/V.s); the I-ON/OFF ratios for both were similar to 10(7). Simultaneously, the gate bias stress stability and photobias stress stability were also improved for the IGZO transistors with an ALD-derived channel, which can be explained by its reduced trap-like VO density.
引用
收藏
页码：1783 / 1788
页数：6
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