Manipulating a Co adatom on a stepped Cu surface by an STM tip: A theoretical study

被引：3
|
作者：
Liu, L. [1 ,4 ]
Huang, R. Z. [1 ]
Sun, Y. S. N. [1 ]
Du, C. C. [1 ]
Zhang, R. J. [2 ]
Zheng, Y. X. [2 ]
Wu, Y. X. [3 ]
机构：
[1] Shenyang Normal Univ, Coll Phys Sci & Technol, Shenyang 110034, Peoples R China
[2] Fudan Univ, Sch Informat Sci & Engn, Shanghai 200433, Peoples R China
[3] Anhui Univ Technol, Inst Mol Engn & Appl Chem, Maanshan 243002, Peoples R China
[4] Northeastern Univ, Coll Sci, Shenyang 110819, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2014年 / 290卷
关键词：
Scanning tunneling microscopy; Stepped surfaces; Atomic manipulation; SINGLE-ATOM; MULTILAYER RELAXATION; LATERAL MANIPULATION; TRANSITION-METALS; CONFINEMENT; MOTION; CHAINS; SHAPE;
D O I：
10.1016/j.apsusc.2013.11.093
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A successful atomic manipulation may be influenced by many factors such as bias voltage, tip structure and manipulation modes et al. Here, performing atomic-scale simulations with ab initio based many-body potentials, we have studied the vertical and lateral manipulation of a single Co adatom on metallic Cu surfaces using STM tips at zero bias voltage. A suitable scheme for manipulating the Co adatom on a Cu(554) surface is proposed. The optimum tip height for a successful lateral manipulation is determined and the reliability of the lateral manipulation of the adatom on the stepped surface is assessed. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：405 / 411
页数：7
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