Temperature dependence of electrical characteristics of Au/SiO2/n-GaAS (MOS) structures

Temperature dependence of capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics of the Au/SiO2/n( MOS) structures were investigated by considering the both the interface states (N-ss) and series resistance (R-s) Both the values of capacitance and conductance generally increase with increasing temperature. These increase in G/w especially at high temperatures results from the existence of interface states at SiO2/n-GaAs interface. It is found the existence of R-s, the forward bias C-V curves exhibit an anamolous peak, and this peak positions shift toward region to inversion region with increasing temperature. Also the magnitude of peak increases with temperature. The values of R-s and Nss were calculated by using Nicollian and Goetzberger and Hill-Coleman respectively. The experimental C-V and G/w-V characteristics confirm that the R-s and N-ss of the MOS structure parameters that strongly influence the electrical characteristics of the Au/SiO2/n-GaAs structures especially at high temperatures.