Modeling the Inversion Charge Centroid in Tri-Gate MOSFETs including Quantum Effects

被引：0
|
作者：
Vimala, P. [1 ]
Balamurugan, N. B. [1 ]
机构：
[1] Thiagarajar Coll Engn Madurai, Madurai, Tamil Nadu, India
来源：
2013 INTERNATIONAL CONFERENCE ON EMERGING TRENDS IN VLSI, EMBEDDED SYSTEM, NANO ELECTRONICS AND TELECOMMUNICATION SYSTEM (ICEVENT 2013) | 2013年
关键词：
Surrounding Gate; Centroid; Quantum effects; Variational approach;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, inversion charge centroid analytical model for Tri-Gate (TG) metal-oxide-semiconductor field effect transistors (MOSFETs) considering quantum effects is presented. To obtain the QM effects of TG MOSFETs, the coupled Poisson and Schrodinger equations are solved using variational approach. This model is developed to provide an analytical expression for inversion charge distribution function (ICDF). The obtained ICDF is used to calculate the inversion charge centroid.
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页数：4
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