Dielectric relaxations of LaAlO3 ceramics over broad temperature range

被引：15

作者：

Lei, Changmei ^{[1
]}

Wang, Chunchang ^{[1
]}

Wang, Guojing ^{[1
]}

Sun, Xiaohong ^{[1
]}

Li, Teng ^{[1
]}

Liu, Lina ^{[1
]}

机构：

[1] Anhui Univ, Lab Dielect Funct Mat, Sch Phys & Mat Sci, Hefei 230039, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2013年 / 555卷

基金：

中国国家自然科学基金;

关键词：

Ceramics; Solid state reactions; Dielectric response; DOPED LAALO3; CONDUCTIVITY RELAXATION; AMORPHOUS LAALO3; GATE DIELECTRICS; OXYGEN; SYSTEM; IMPEDANCE; BEHAVIOR; OXIDES; FILMS;

D O I：

10.1016/j.jallcom.2012.12.041

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

LaAlO3 ceramics were prepared via the solid-state reaction route. The low-frequency dielectric properties were investigated in detail in a broad temperature range from 100 to 1100 K. We found that LaAlO3 shows a flat dielectric plateau independent of frequency and temperature below 500 K. When temperature higher than 500 K, two thermally activated dielectric relaxations were observed with the activation energy of 1.13 eV for the low-temperature relaxation and 1.9 eV for the high-temperature relaxation. Our result indicates that the low-temperature relaxation is related to the bulk effect due to hopping motions of oxygen vacancies and the high-temperature relaxation was associated with the Maxwell-Wagner relaxation due to the interface effect. Crown Copyright (C) 2012 Published by Elsevier B. V. All rights reserved.

引用

页码：51 / 55

页数：5

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