Carrier dynamics in the wetting layer of InGaAs/GaAs quantum dots grown by using migration-enhanced epitaxy

被引：0
|
作者：
An, Chengshou [1 ,2 ]
Jang, Yudong [1 ]
Lee, Donghan [1 ]
Song, Jindong [3 ]
Choi, Wonjun [3 ]
机构：
[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea
[2] Yanbian Univ, Dept Phys, Coll Sci, Yanji 133002, Jilin, Peoples R China
[3] Korea Inst Sci & Technol, Ctr Optoelect Convergence Syst, Seoul 136791, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2013年 / 62卷 / 08期
基金：
新加坡国家研究基金会;
关键词：
Quantum dots; Migration-enhanced epitaxy; Wetting layer; Decay time;
D O I：
10.3938/jkps.62.1150
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have investigated the effects of carrier localization on the migration-enhancing time in a wetting layer (WL) of quantum dots (QDs) grown by using the migration-enhanced epitaxy (MEE) growth technique. The WL photoluminescence (PL) intensity of QD sample grown with a longer migration-enhancing time remained strong even at low excitation densities. The PL decay time at the WL peak was longer for the MEE-grown QD with a longer migration-enhancing time. Moreover, the decay times of MEE-grown QDs across the WL's PL band were longer at longer wavelengths. We conclude that the localization effect in the WL intensifies as the migration-enhancing time is increased.
引用
收藏
页码：1150 / 1153
页数：4
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