Fluctuating in the hopping rate of CuO thin films with respect to substrate temperature

被引：14
|
作者：
Serin, N. [2 ]
Yildiz, A. [1 ]
Cam, E. [2 ]
Uzun, S. [2 ]
Serin, T. [2 ]
机构：
[1] Yildirim Beyazit Univ, Fac Engn & Nat Sci, Dept Energy Syst Engn, Ankara, Turkey
[2] Ankara Univ, Fac Engn, Dept Engn Phys, TR-06100 Ankara, Turkey
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2012年 / 52卷 / 04期
关键词：
d.c. Magnetron sputtering technique; CuO; Electrical conductivity; Multi-phonon hopping conduction; OXIDE;
D O I：
10.1016/j.spmi.2012.06.011
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Electrical transport properties in CuO thin films processed using d.c. magnetron sputtering technique is investigated to understand the correlation between the processing conditions and electrical properties. It is identified that the temperature dependent conductivity of the investigated films is controlled by the multi-phonon hopping conduction mechanism. A detailed analysis in terms of carrier hopping parameters is used to correlate electrical transport properties with the d.c. magnetron sputtering conditions. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：759 / 764
页数：6
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