Hopping conduction in In-doped CuO thin films

被引：40
|
作者：
Yildiz, A. [1 ]
Horzum, S. [2 ]
Serin, N. [2 ]
Serin, T. [2 ]
机构：
[1] Yildirim Beyazit Univ, Fac Engn & Nat Sci, Dept Energy Syst Engn, Ankara, Turkey
[2] Ankara Univ, Fac Engn, Dept Engn Phys, TR-06100 Ankara, Turkey
来源：
APPLIED SURFACE SCIENCE | 2014年 / 318卷
关键词：
Sol-gel dip-coating; In-doped CuO; Electrical resistivity; Hopping conduction;
D O I：
10.1016/j.apsusc.2014.01.118
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Electrical transport properties of undoped and In-doped CuO thin films (1, 5 and 10 at. %) are investigated by mean of resistivity in the temperature range of 115-300 K. Electrical transport mechanism of films is explained on the basis of the variable-range hopping (VRH) conduction. Upon doping, appreciable changes are found in resistivity. Temperature dependent resistivity shows a complex correlation with increasing In concentration. This situation is well explained by fluctuations in the hopping distance and the density of states at the Fermi level. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：105 / 107
页数：3
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