Transparent Nanoscale Floating Gate Memory Using Self-Assembled Bismuth Nanocrystals in Bi2Mg2/3Nb4/3O7 (BMN) Pyrochlore Thin Films Grown at Room Temperature

被引：6
|
作者：
Jung, Hyun-June [1 ]
Yoon, Soon-Gil [1 ]
Hong, Soon-Ku [1 ]
Lee, Jeong-Yong [2 ]
机构：
[1] Chungnam Natl Univ, Dept Mat & Engn, Taejon 305764, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
来源：
ADVANCED MATERIALS | 2012年 / 24卷 / 25期
基金：
新加坡国家研究基金会;
关键词：
self-assembled bismuth nanocrystals; rf sputtering; atomic layer deposition; transparent NFGM devices; high-k BMN thin films; HFO2;
D O I：
10.1002/adma.201200707
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Bismuth nanocrystals for a nanoscale floating gate memory device are self-assembled in Bi 2Mg 2/3Nb 4/3O 7 (BMN) dielectric films grown at room temperature by radio-frequency sputtering. The TEM cross-sectional image shows the "real" structure grown on a Si (001) substrate. The image magnified from the dotted box (red color) in the the cross-sectional image clearly shows bismuth nanoparticles at the interface between the Al 2O 3 and HfO 2 layer (right image). Nanoparticles approximately 3 nm in size are regularly distributed at the interface. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：3396 / 3400
页数：5
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