Spin dynamics of excited trion states in a single InAs quantum dot

被引：15
|
作者：
Igarashi, Y. [1 ,2 ]
Shirane, M. [1 ,2 ]
Ota, Y. [2 ,3 ]
Nomura, M. [2 ]
Kumagai, N. [2 ]
Ohkouchi, S. [2 ]
Kirihara, A. [1 ,2 ]
Ishida, S. [2 ,3 ]
Iwamoto, S. [2 ,3 ]
Yorozu, S. [1 ,2 ]
Arakawa, Y. [2 ,3 ]
机构：
[1] NEC Corp Ltd, Green Innovat Res Labs, Tsukuba, Ibaraki 3058501, Japan
[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan
[3] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
来源：
PHYSICAL REVIEW B | 2010年 / 81卷 / 24期
基金：
日本科学技术振兴机构;
关键词：
D O I：
10.1103/PhysRevB.81.245304
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We measure photon cross-correlation between two positively charged biexcitonic emission lines and a positively charged excitonic line for a single InAs/GaAs quantum dot (QD). Marked difference in the correlation function is observed, which originates from multiple spin configurations of intermediate states, i.e., excited positively charged exciton (trion) states. With the aid of a rate equation simulation, we evaluate the transition rate with p-shell hole-spin flip to be 0.8-1.0 GHz, which is almost comparable to the radiative decay rate of the ground charged exciton, presumably due to the spin scattering between carriers in a QD and a wetting layer and/or mixing of the excited trion states. In contrast, the relaxation rate with conserving p-shell hole-spin projection is estimated to be about one order of magnitude higher than that with hole-spin flip.
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页数：5
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