Effect of growth condition of buffer layer for heteroepitaxial InSb films grown on Ge(111) substrate

被引：0
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作者：
Mitsueda, Takaaki [1 ]
Mori, Masayuki [1 ]
Maezawa, Koichi [1 ]
机构：
[1] Toyama Univ, Grad Sch Sci & Engn, Toyama, Toyama, Japan
来源：
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) | 2016年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页数：1
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