High-Performance n-Type Organic Thin-Film Transistors Based on Solution-Processable Perfluoroalkyl-Substituted C60 Derivatives

High performance n-type organic thin-film transistors (TFTs) were developed using solution-processable perfluoralkyl-substituted C60 derivatives with high electron mobility and air stability. X-ray diffraction (XRD) measurement was carried out to examine the microstructure of spin-coated films. It was observed that the spin-coated films of perfluoroalkyl substituted C 60 through the para position of phenyl group showed high crystallinity. The XRD patterns showed that the film crystallinity depend on fluoroalkyl-chain orientation and length. It was also found that the crystallinity and air-stability of the films can be improved by optimizing thin-film fabrication conditions. It was observed that the introduction of a long-chain perfluoroalkyl group to C60 can be used for fabrication of stable and high performance n-type organic TFTs.