Insertion of Parallel RL Circuits into Power Distribution Network for Simultaneous Switching Current Reduction and Power Integrity

被引:0
|
作者
Iokibe, Kengo [1 ]
Yano, Yusuke [1 ]
Toyota, Yoshitaka [1 ]
机构
[1] Okayama Univ, Grad Sch Nat Sci & Technol, Kita Ku, Okayama 7008530, Japan
关键词
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We investigated a method using parallel RL circuits inserted into power distribution network (PDN) of integrated circuits (ICs) to enhance the IC in EMI and PI performance. Optimal damping resistances of the parallel RL circuit were derived from a characteristic equation of an equivalent circuit of a partial PDN that contributed to PDN resonances dominantly. The parallel RL circuit with the optimal resistances damps the PDN resonances as quickly as possible and reduces peaks in simultaneous switching current that will cause EMI and in input impedance of PDN related to PI. We validated the parallel RL circuit with respect to EMI and PI performance of ICs numerically and experimentally. Results of these validation showed that the proposed method descend the simultaneous switching current at both chip-package-board and on-board resonant frequency. It is also confirmed that insertion of the parallel RL circuits into the power trace reduced the impedance peak due to the chip-package-board resonance.
引用
收藏
页码:417 / 420
页数:4
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