Verification of a Foundry-Developed Transistor Model Including Measurement Uncertainty

被引：0

作者：

Williams, Dylan ^{[1
]}

Zhao, Wei ^{[1
]}

Chamberlin, Richard A. ^{[1
]}

Cheron, Jerome ^{[1
]}

Urteaga, Miguel ^{[2
]}

机构：

[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[2] Teledyne Sci, Thousand Oaks, CA USA

来源：

2016 87TH ARFTG MICROWAVE MEASUREMENT CONFERENCE (ARFTG) | 2016年

关键词：

Model; transistor; measurement;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We verify a foundry model for state-of-the-art 250 nm heterojunction bipolar transistors with large-signal measurements. We demonstrate the propagation of correlated measurement uncertainties through the verification process, and use them to quantify the differences we observe in the measurements and models.

引用

页数：4

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