The Application of Bismuth-Based Oxides in Organic-Inorganic Hybrid Photovoltaic Devices

被引：30

作者：

Liu, Zhike

Yan, Feng ^{[1
]}

机构：

[1] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2012年 / 95卷 / 06期

关键词：

VISIBLE-LIGHT; PHOTOELECTROCHEMICAL PROPERTIES; PHOTOCATALYTIC PROPERTIES; ELECTRONIC-STRUCTURE; SOLAR-CELLS; BIVO4; PERFORMANCE; ENHANCEMENT; TRANSITION; MECHANISM;

D O I：

10.1111/j.1551-2916.2012.05088.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Bismuth-based ferroelectric oxide films including BiFeO3, Bi2WO6 and BiVO4 with different band structure are prepared by pulsed laser deposition method and used as n-type semiconductors in photovoltaic devices. The oxide films are combined with p-type organic semiconductor poly(3-hexylthiophene) to form bilayer heterojunctions and their photovoltaic effects are systematically studied. Compared with some other oxide semiconductors, such as ZnO or TiO2, the bismuth-based oxides exhibit wider absorption spectra and can induce higher external quantum efficiency, open circuit voltage, and power conversion efficiency of the hybrid devices, indicating that bismuth-based oxides are promising materials for photovoltaic devices.

引用

页码：1944 / 1948

页数：5

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