CMOS RF power amplifier with reconfigurable transformer

被引：8
|
作者：
Kim, Y.
Park, C.
Kim, H.
Hong, S.
机构：
[1] Korea Adv Inst Sci & Technol, Sch Engn, Taejon 305701, South Korea
[2] Hanbat Natl Univ, Sch Engn, Taejon 305719, South Korea
来源：
ELECTRONICS LETTERS | 2006年 / 42卷 / 07期
关键词：
D O I：
10.1049/el:20060237
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A CMOS RF power amplifier that can Change the Output transformer ratio is presented. The CMOS power amplifier is fully integrated in a 0.13 mu m process and has a power added efficiency (PAE) of 38% at 2.1 GHz and an Output power of 30.7 dBm with 3.0 V supply voltage. The PAE at an output power of 16 dBm was increased by 40% by altering the transformer ratio.
引用
收藏
页码：405 / 407
页数：3
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