Impact of Annealing Temperature on Tunneling Magnetoresistance Multilayer Stacks

被引：10

作者：

Schnitzspan, Leo ^{[1
]}

Cramer, Joel ^{[1
]}

Kubik, Jan ^{[2
]}

Tarequzzaman, Mohammad ^{[2
]}

Jakob, Gerhard ^{[1
]}

Klaui, Mathias ^{[1
]}

机构：

[1] Johannes Gutenberg Univ Mainz, Inst Phys, D-55099 Mainz, Germany

[2] Anal Devices, Limerick V94 RT99, Ireland

来源：

IEEE MAGNETICS LETTERS | 2020年 / 11卷

基金：

欧盟地平线“2020”;

关键词：

Spin electronics; magnetic tunnel junctions; annealing; exchange bias; tunneling magnetoresistance; EXCHANGE BIAS; THERMAL-STABILITY; HIGH-SPEED; INTERFACE; JUNCTIONS; FILMS;

D O I：

10.1109/LMAG.2020.3005381

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of annealing temperatures on the tunnel magnetoresistance (TMR) of MgO-based magnetic tunnel junctions (MTJs) has been investigated for annealing between 190 and 370 degrees C. The TMR shows a maximum value of 215% at an annealing temperature of 330 degrees C. A strong sensitivity of the TMR and the exchange bias of the pinned ferromagnetic layers on the annealing temperature are observed. Depending on sensor application requirements, the MTJ can be optimized either for stability and pinning strength or for a high TMR signal by choosing the appropriate annealing temperature. The switching mechanism of the ferromagnetic layers in the MTJ and the influence of the annealing on the layer properties, including the MgO barrier, are discussed.

引用

页码：1 / 5

页数：5

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