Impact of Annealing Temperature on Tunneling Magnetoresistance Multilayer Stacks

被引：10
|
作者：
Schnitzspan, Leo [1 ]
Cramer, Joel [1 ]
Kubik, Jan [2 ]
Tarequzzaman, Mohammad [2 ]
Jakob, Gerhard [1 ]
Klaui, Mathias [1 ]
机构：
[1] Johannes Gutenberg Univ Mainz, Inst Phys, D-55099 Mainz, Germany
[2] Anal Devices, Limerick V94 RT99, Ireland
来源：
IEEE MAGNETICS LETTERS | 2020年 / 11卷
基金：
欧盟地平线“2020”;
关键词：
Spin electronics; magnetic tunnel junctions; annealing; exchange bias; tunneling magnetoresistance; EXCHANGE BIAS; THERMAL-STABILITY; HIGH-SPEED; INTERFACE; JUNCTIONS; FILMS;
D O I：
10.1109/LMAG.2020.3005381
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of annealing temperatures on the tunnel magnetoresistance (TMR) of MgO-based magnetic tunnel junctions (MTJs) has been investigated for annealing between 190 and 370 degrees C. The TMR shows a maximum value of 215% at an annealing temperature of 330 degrees C. A strong sensitivity of the TMR and the exchange bias of the pinned ferromagnetic layers on the annealing temperature are observed. Depending on sensor application requirements, the MTJ can be optimized either for stability and pinning strength or for a high TMR signal by choosing the appropriate annealing temperature. The switching mechanism of the ferromagnetic layers in the MTJ and the influence of the annealing on the layer properties, including the MgO barrier, are discussed.
引用
收藏
页码：1 / 5
页数：5
相关论文
共 50 条
  • [1] Thickness Dependent Interlayer Magnetoresistance in Multilayer Graphene Stacks
    Bodepudi, S. C.
    Wang, X.
    Singh, A. P.
    Pramanik, S.
    [J]. JOURNAL OF NANOMATERIALS, 2016, 2016
  • [2] Angle dependent interlayer magnetoresistance in multilayer graphene stacks
    Bodepudi, S. C.
    Wang, Xiao
    Pramanik, S.
    [J]. JOURNAL OF APPLIED PHYSICS, 2015, 118 (16)
  • [3] Effect of plasma oxidation time and annealing condition on the temperature dependence of tunneling magnetoresistance
    Kim, SH
    Chun, BS
    Kim, YK
    Lee, SR
    [J]. METALS AND MATERIALS INTERNATIONAL, 2003, 9 (01) : 57 - 59
  • [4] Effect of plasma oxidation time and annealing condition on the temperature dependence of tunneling magnetoresistance
    Sung Hoon Kim
    Byong Sun Chun
    Young Keun Kim
    Seong -Rae Lee
    [J]. Metals and Materials International, 2003, 9 : 57 - 59
  • [5] Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks
    Reichlova, H.
    Novak, V.
    Kurosaki, Y.
    Yamada, M.
    Yamamoto, H.
    Nishide, A.
    Hayakawa, J.
    Takahashi, H.
    Marysko, M.
    Wunderlich, J.
    Marti, X.
    Jungwirth, T.
    [J]. MATERIALS RESEARCH EXPRESS, 2016, 3 (07):
  • [6] Origin of temperature dependence in tunneling magnetoresistance
    Åkerman, JJ
    Roshchin, IV
    Slaughter, JM
    Dave, RW
    Schuller, IK
    [J]. EUROPHYSICS LETTERS, 2003, 63 (01): : 104 - 110
  • [7] Applied voltage and temperature dependence of tunneling magnetoresistance
    Tezuka, N
    Oogane, M
    Miyazaki, T
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 198-99 : 149 - 151
  • [8] Temperature dependence of the tunneling magnetoresistance for tunnel junctions
    Lee, JH
    Chang, IW
    Byun, SJ
    Rhie, K
    Shin, KH
    Lee, KI
    Ha, JG
    Lee, BC
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2002, 240 (1-3) : 149 - 151
  • [9] Effect of annealing atmosphere on MgO thin film for tunneling magnetoresistance sensor
    Kongtungmon, Mongkol
    Supadee, Laddawan
    Kundhikanjana, Worasom
    Janphuang, Pattanaphong
    Supruangnet, Ratchadaporn
    Tongpeng, Suparat
    Jongpinit, Watcharin
    Munthala, Dhanunjaya
    Pojprapai, Soodkhet
    [J]. MATERIALS RESEARCH BULLETIN, 2023, 167
  • [10] Effect of annealing on magnetic and magnetoresistance characteristics of Gd/CoFeTaB multilayer film
    Xiang, Ou
    Xiong, Chengyue
    Wang, Zhihao
    Zhang, Yingde
    Xu, Yunli
    Yi, Lizhi
    Piao, Hong-Guang
    Pan, Liqing
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2020, 516
12345