Radiation-stimulated processes in Si surface layers

被引：0
|
作者：
Jacobs, PWM [1 ]
Kiv, AE [1 ]
Soloviev, VN [1 ]
Maximova, TN [1 ]
Chislov, VV [1 ]
机构：
[1] Univ Western Ontario, Ctr Chem Phys, London, ON N6A 3K7, Canada
来源：
INTERNATIONAL WORKSHOP ON NONDESTRUCTIVE TESTING AND COMPUTER SIMULATIONS IN SCIENCE AND ENGINEERING | 1999年 / 3687卷
关键词：
Si surface; molecular dynamics; relaxation processes; radiation effects;
D O I：
10.1117/12.347417
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
Molecular dynamics computer simulations have been performed to study the character of disordering of atom configurations in Si surface layers. The relaxation of free Si surface was investigated. The main structural parameters were calculated, such as a distribution of angles between chemical bonds, the density of dangling bonds, structural peculiarities of Si surface layers and radiation effects. It was concluded that Si surface at real conditions is a disordered phase similar to a-Si [1].
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页码：170 / 174
页数：5
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